NDP6060 |
RFQ for NDP6060 Required Field |
 |
| Technical/Catalog Information | NDP6060 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 24A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDP6060 NDP6060 |
| Product | Manufacturers | Pack | D/C |
| NDP6060 | - | TO-220 | 05+ |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features |
| `48A, 60V. RDS(ON) = 0.025 @ VGS=10V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design for extremely low RDS(ON).`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. |
| Symbol | Parameter | NDP6060 | NDB6060 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous Tc=25oC - Continuous TC=100oC - Pulsed |
48 |
A | |
|
32 | ||||
|
144 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
100 |
W | |
|
0.67 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
| Models | MFG | Pack |
| NDP020-07F | ||
| NDP4050 | TO-220 | |
| NDP4050L | TO-220 | |
| NDP405A | ||
| NDP405BL | ||
| NDP4060 | TO-220 | |
| NDP4060L | TO-220 | |
| NDP406A | ||
| NDP406AL | ||
| NDP406BL | ||
| NDP408 | ||
| NDP408A | TO | |
| NDP408AEL | ||
| NDP408B | TO | |
| NDP408BE | TO | |
| NDP410A | TO | |
| NDP410AL | ||
| NDP410B | TO | |
| NDP410BE | TO | |
| NDP410BL | ||
| NDP506 | ||
| NDP5060 | TO-220 | |
| NDP5060L | TO | |
| NDP506A | ||
| NDP506AEL | ||
| NDP506AL | ||
| NDP508A | TO | |
| NDP508AEL | ||
| NDP508B | TO | |
| NDP510A | N/A | |
| NDP6051 | ||
| NDP6050L | ||
| NDP6050 | ||
| NDP603AL | ||
| NDP6030PL | ||
| NDP6030L | ||
| NDP6030 | ||
| NDP6020P | ||
| NDP6020 | ||
| NDP510BE | ||
| NDP510B | ||
| NDP510AE | ||
| NDP510A | ||
| NDP508BE | ||
| NDP508B | ||
| NDP508AE | ||
| NDP508A | ||
| NDP5060L | ||
| NDP5060 | ||
| NDP410BE |
